Summary
Crystalline silicon wafer solar cells have been dominating the photovoltaic market so far due to the availability and stability of c-Si and the decades of Si technology development. However, without new ways to improve the conversion efficiencies further significant cost reductions will be difficult and the c-Si technology will not be able to maintain its dominant role. In the SiTaSol project we want to increase conversion efficiencies of c-Si solar cells to 30 % by combining it with III-V top absorbers. Such a tandem solar cell will result in huge savings of land area and material consumption for photovoltaic electricity generation and offers clear advantages compared to today’s products. The III-V/Si tandem cell with an active Si bottom junction with one front and back contact is a drop-in-replacement for today’s Si flat plate terrestrial PV. To make this technology cost competitive, the additional costs for the 2-5 µm Ga(In)AsP epitaxy and processing must remain below 1 €/wafer to enable module costs
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/727497 |
| Start date: | 01-05-2017 |
| End date: | 31-01-2021 |
| Total budget - Public funding: | 4 298 201,25 Euro - 4 298 201,00 Euro |
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Original description
Crystalline silicon wafer solar cells have been dominating the photovoltaic market so far due to the availability and stability of c-Si and the decades of Si technology development. However, without new ways to improve the conversion efficiencies further significant cost reductions will be difficult and the c-Si technology will not be able to maintain its dominant role. In the SiTaSol project we want to increase conversion efficiencies of c-Si solar cells to 30 % by combining it with III-V top absorbers. Such a tandem solar cell will result in huge savings of land area and material consumption for photovoltaic electricity generation and offers clear advantages compared to today’s products. The III-V/Si tandem cell with an active Si bottom junction with one front and back contact is a drop-in-replacement for today’s Si flat plate terrestrial PV. To make this technology cost competitive, the additional costs for the 2-5 µm Ga(In)AsP epitaxy and processing must remain below 1 €/wafer to enable module costsStatus
CLOSEDCall topic
LCE-07-2016-2017Update Date
26-10-2022
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