Summary
The IRDS roadmap considers two-dimensional (2D) materials a promising option for scaling electronic
devices down to atomic dimensions. While there has been a lot of progress regarding 2D semiconductors,
all electronic devices require suitable insulators as well. Although a major show-stopper, insulators have
received far less attention and their is no clear roadmap as to which insulators can be used for ultimately
scaled nanoelectronics.
My group was recently first to demonstrate back-gated 2D FETs using ultrathin calcium fluoride (CaF2)
as an insulator. Based on these promising results, I firmly believe that fluorides, which are ionic crystals
with often very wide bandgaps, can efficiently address the major challenges: (i) Although relatively
exotic materials, their growth is considerably better established than that of any 2D material. (ii) CaF2 can
be epitaxially grown layer-by-layer on silicon substrates and likely also on 2D semiconductors. As their
F-terminated inert surface supports van der Waals epitaxy of 2D materials, they could be the missing link
between 3D substrates and 2D semiconductors. (iii) The low-defectivity of the inert CaF2 surface will
significantly improve device performance and stability. Thereby, fluorides will allow novel 2D devices to
make the leap from promising concepts to highly performant and stable real devices.
F2GO will establish fluorides as a key enabler for 2D nanoelectronics by successfully demonstrating
device architectures which were previously impossible to fabricate with sufficient performance due to
inadequate insulators. I will do so by investigating selected fluoride-based devices for key technologies: (i)
steep slope devices for CMOS logic (Cold Source FETs) at the ultimate scaling limit to allow sub-100 mV
operation and (ii) ultra-scaled non-volatile memory devices (Flash and TRAM). Thereby, F2GO will pave
the way for fluoride-based nanoelectronics at the ultimate scaling limit as required for the generations
2030+.
devices down to atomic dimensions. While there has been a lot of progress regarding 2D semiconductors,
all electronic devices require suitable insulators as well. Although a major show-stopper, insulators have
received far less attention and their is no clear roadmap as to which insulators can be used for ultimately
scaled nanoelectronics.
My group was recently first to demonstrate back-gated 2D FETs using ultrathin calcium fluoride (CaF2)
as an insulator. Based on these promising results, I firmly believe that fluorides, which are ionic crystals
with often very wide bandgaps, can efficiently address the major challenges: (i) Although relatively
exotic materials, their growth is considerably better established than that of any 2D material. (ii) CaF2 can
be epitaxially grown layer-by-layer on silicon substrates and likely also on 2D semiconductors. As their
F-terminated inert surface supports van der Waals epitaxy of 2D materials, they could be the missing link
between 3D substrates and 2D semiconductors. (iii) The low-defectivity of the inert CaF2 surface will
significantly improve device performance and stability. Thereby, fluorides will allow novel 2D devices to
make the leap from promising concepts to highly performant and stable real devices.
F2GO will establish fluorides as a key enabler for 2D nanoelectronics by successfully demonstrating
device architectures which were previously impossible to fabricate with sufficient performance due to
inadequate insulators. I will do so by investigating selected fluoride-based devices for key technologies: (i)
steep slope devices for CMOS logic (Cold Source FETs) at the ultimate scaling limit to allow sub-100 mV
operation and (ii) ultra-scaled non-volatile memory devices (Flash and TRAM). Thereby, F2GO will pave
the way for fluoride-based nanoelectronics at the ultimate scaling limit as required for the generations
2030+.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/101055379 |
| Start date: | 01-09-2022 |
| End date: | 31-08-2027 |
| Total budget - Public funding: | 2 498 609,00 Euro - 2 498 609,00 Euro |
Cordis data
Original description
The IRDS roadmap considers two-dimensional (2D) materials a promising option for scaling electronicdevices down to atomic dimensions. While there has been a lot of progress regarding 2D semiconductors,
all electronic devices require suitable insulators as well. Although a major show-stopper, insulators have
received far less attention and their is no clear roadmap as to which insulators can be used for ultimately
scaled nanoelectronics.
My group was recently first to demonstrate back-gated 2D FETs using ultrathin calcium fluoride (CaF2)
as an insulator. Based on these promising results, I firmly believe that fluorides, which are ionic crystals
with often very wide bandgaps, can efficiently address the major challenges: (i) Although relatively
exotic materials, their growth is considerably better established than that of any 2D material. (ii) CaF2 can
be epitaxially grown layer-by-layer on silicon substrates and likely also on 2D semiconductors. As their
F-terminated inert surface supports van der Waals epitaxy of 2D materials, they could be the missing link
between 3D substrates and 2D semiconductors. (iii) The low-defectivity of the inert CaF2 surface will
significantly improve device performance and stability. Thereby, fluorides will allow novel 2D devices to
make the leap from promising concepts to highly performant and stable real devices.
F2GO will establish fluorides as a key enabler for 2D nanoelectronics by successfully demonstrating
device architectures which were previously impossible to fabricate with sufficient performance due to
inadequate insulators. I will do so by investigating selected fluoride-based devices for key technologies: (i)
steep slope devices for CMOS logic (Cold Source FETs) at the ultimate scaling limit to allow sub-100 mV
operation and (ii) ultra-scaled non-volatile memory devices (Flash and TRAM). Thereby, F2GO will pave
the way for fluoride-based nanoelectronics at the ultimate scaling limit as required for the generations
2030+.
Status
SIGNEDCall topic
ERC-2021-ADGUpdate Date
09-02-2023
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