Summary
Perovskite-silicon tandem solar cells are one of the most promising new technologies in solar energy research, due to their high efficiencies and use of low-cost materials. One attractive way to make these tandems is to grow the wide band gap perovskite on textured silicon solar cells, forming a monolithic tandem. Record efficiencies of 31.25% have been reported for these monolithic tandems, but still on relatively small area devices (1 cm2). To bring this technology closer to the market, it is imperative to start focussing on scalability. Specifically, the perovskite top cell needs to be reliably produced with industrially-validated, scalable deposition methods. This deposition method should also allow high deposition rates and direct integration of the perovskite top cell into textured silicon cells. SPRINT will develop sputtering deposition of these perovskites. Sputtering is a highly industrialized physical vapor deposition (PVD) method that tackles all challenges: high deposition rate, conformal deposition and is scalable. But to date it hasn’t been explored for halide perovskites. SPRINT's goal is to use the knowledge generated in my ERC StG CREATE for halide target fabrication (patent filed) and single target PVD deposition, and apply this to develop a sputtering coating process for inorganic wide band gap perovskites for monolithic integration in tandem devices. SPRINT will bring an innovative solution to key stakeholders in the PV market. Specifically, PV module manufacturers (such as Oxford PV and Meyer Burger) could implement the process into existing sputtering systems in their R&D labs and later into production lines. Vacuum equipment manufacturers (such as Von Ardenne and Demcon TSST) will benefit from the demand for deposition equipment. This will allow fast-tracking a new generation of PV to the market with > 30% efficiency at a lower price point, strengthening the European PV market.
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| Web resources: | https://cordis.europa.eu/project/id/101113313 |
| Start date: | 01-06-2023 |
| End date: | 30-11-2024 |
| Total budget - Public funding: | - 150 000,00 Euro |
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Original description
Perovskite-silicon tandem solar cells are one of the most promising new technologies in solar energy research, due to their high efficiencies and use of low-cost materials. One attractive way to make these tandems is to grow the wide band gap perovskite on textured silicon solar cells, forming a monolithic tandem. Record efficiencies of 31.25% have been reported for these monolithic tandems, but still on relatively small area devices (1 cm2). To bring this technology closer to the market, it is imperative to start focussing on scalability. Specifically, the perovskite top cell needs to be reliably produced with industrially-validated, scalable deposition methods. This deposition method should also allow high deposition rates and direct integration of the perovskite top cell into textured silicon cells. SPRINT will develop sputtering deposition of these perovskites. Sputtering is a highly industrialized physical vapor deposition (PVD) method that tackles all challenges: high deposition rate, conformal deposition and is scalable. But to date it hasn’t been explored for halide perovskites. SPRINT's goal is to use the knowledge generated in my ERC StG CREATE for halide target fabrication (patent filed) and single target PVD deposition, and apply this to develop a sputtering coating process for inorganic wide band gap perovskites for monolithic integration in tandem devices. SPRINT will bring an innovative solution to key stakeholders in the PV market. Specifically, PV module manufacturers (such as Oxford PV and Meyer Burger) could implement the process into existing sputtering systems in their R&D labs and later into production lines. Vacuum equipment manufacturers (such as Von Ardenne and Demcon TSST) will benefit from the demand for deposition equipment. This will allow fast-tracking a new generation of PV to the market with > 30% efficiency at a lower price point, strengthening the European PV market.Status
SIGNEDCall topic
ERC-2022-POC2Update Date
31-07-2023
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