Summary
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.
We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size 3.5%, FWHM
We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size 3.5%, FWHM
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/190127219 |
| Start date: | 01-02-2023 |
| End date: | 31-01-2025 |
| Total budget - Public funding: | 3 186 833,75 Euro - 2 230 783,00 Euro |
Cordis data
Original description
Our method of growing pure InGaN μLEDs is completely unique. We start with a layer of thin GaN on a substrate. This layer has the same high defect density that other existing technologies struggle with. Then we add a mask made of either silicon nitride or aluminum oxide introduced by us using a high-resolution lithography process. The mask contains tiny holes ca. 100 nm in diameter which become growth sites for intrinsically defect-free InGaN pyramids. These pyramids are then reshaped into truncated hexagonal pyramids, aka InGaN platelets that are just 700 nm wide (effectively a nanoLED) and contain the active micro LED structure after regrowth on the top c-plane of the InGaN platelets.We can already grow the μLEDs on 2” wafers on a sapphire substrate, and we are developing new methods to grow 4” wafers on a silicon substrate. Our KPIs (pixel size 3.5%, FWHM
Status
SIGNEDCall topic
HORIZON-EIC-2022-ACCELERATOROPEN-01Update Date
31-07-2023
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