Summary
The next wave of electronic quantum devices requires the development of solid-state systems showcasing distinct quantum properties. The ongoing intensive research has pinpointed promising quantum systems in 2D materials, particularly those derived from transition metal dichalcogenides (TMDs). Their properties are typically investigated in two distinct and separate phases. Initially, electronic states and transitions between them are studied through optical spectroscopy. The material is then embedded in a device whose electrical response is characterised by using electron transport spectroscopy. This workflow, however, fails to capture events such as grain boundaries formation, defects, and carrier scattering sources that happen when the device is operating and are major factors for performance deterioration and energy wastage. As a result, the correlation between material structure modifications and quantum properties remains largely unexplored. This action seeks to bridge this gap by merging both techniques into a unified, real-time methodology. I will produce wafer-sized TMDs layers using a novel synthesis technique compatible with industry routines for large-scale manufacturing. I will then fabricate TMD-based field-effect transistors and monitor the optical response of the channel whilst charge carriers flow through it. This will provide a fundamental understanding of rapid ageing effects in nanoscale transistors. Ultimately, using this knowledge, I aim to fabricate energy-efficient logic gates with TMDs.
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| Web resources: | https://cordis.europa.eu/project/id/101151367 |
| Start date: | 01-05-2024 |
| End date: | 30-04-2026 |
| Total budget - Public funding: | - 172 750,00 Euro |
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Original description
The next wave of electronic quantum devices requires the development of solid-state systems showcasing distinct quantum properties. The ongoing intensive research has pinpointed promising quantum systems in 2D materials, particularly those derived from transition metal dichalcogenides (TMDs). Their properties are typically investigated in two distinct and separate phases. Initially, electronic states and transitions between them are studied through optical spectroscopy. The material is then embedded in a device whose electrical response is characterised by using electron transport spectroscopy. This workflow, however, fails to capture events such as grain boundaries formation, defects, and carrier scattering sources that happen when the device is operating and are major factors for performance deterioration and energy wastage. As a result, the correlation between material structure modifications and quantum properties remains largely unexplored. This action seeks to bridge this gap by merging both techniques into a unified, real-time methodology. I will produce wafer-sized TMDs layers using a novel synthesis technique compatible with industry routines for large-scale manufacturing. I will then fabricate TMD-based field-effect transistors and monitor the optical response of the channel whilst charge carriers flow through it. This will provide a fundamental understanding of rapid ageing effects in nanoscale transistors. Ultimately, using this knowledge, I aim to fabricate energy-efficient logic gates with TMDs.Status
SIGNEDCall topic
HORIZON-MSCA-2023-PF-01-01Update Date
12-03-2024
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