Summary
The overall goal of TECNO is to become an enabling technology for InSb-based devices on Si, which has numerous and wide-ranging applications, such as IR sensing, Majorana zero mode devices, and high-performance cryogenic amplifiers. For this purpose, I propose an innovative approach to template-assisted selective deposition. In the currently implemented integration technology at IBM, I will replace the semiconductor deposition process (MOCVD) by electrochemical methods. This will enable entirely new possibilities of integrating III-V semiconductors on silicon for sensing and quantum computing. TECNO will result in an solution-based technology for the preparation of high-quality multicomponent semiconductor materials and validate the proposed path by demonstrating functional electronic devices on silicon.
The aim of the project is also to significantly expand my knowledge base and therefore amplify the impact of my research as well as my career prospects. TECNO ideally demonstrates the mutual overlap of typically quite separate fields, i.e. chemistry with solid state physics and device engineering. My deep expertise in electrochemistry perfectly matches the requirements of IBMs semiconductor interests and their integration technology. It is truly beneficial for both parties involved. IBM will benefit from my electrochemical solution expertise, while I will learn how to push my work to another level of maturity and impact in an industrial environment.
The aim of the project is also to significantly expand my knowledge base and therefore amplify the impact of my research as well as my career prospects. TECNO ideally demonstrates the mutual overlap of typically quite separate fields, i.e. chemistry with solid state physics and device engineering. My deep expertise in electrochemistry perfectly matches the requirements of IBMs semiconductor interests and their integration technology. It is truly beneficial for both parties involved. IBM will benefit from my electrochemical solution expertise, while I will learn how to push my work to another level of maturity and impact in an industrial environment.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/894326 |
| Start date: | 01-11-2020 |
| End date: | 31-10-2022 |
| Total budget - Public funding: | 191 149,44 Euro - 191 149,00 Euro |
Cordis data
Original description
The overall goal of TECNO is to become an enabling technology for InSb-based devices on Si, which has numerous and wide-ranging applications, such as IR sensing, Majorana zero mode devices, and high-performance cryogenic amplifiers. For this purpose, I propose an innovative approach to template-assisted selective deposition. In the currently implemented integration technology at IBM, I will replace the semiconductor deposition process (MOCVD) by electrochemical methods. This will enable entirely new possibilities of integrating III-V semiconductors on silicon for sensing and quantum computing. TECNO will result in an solution-based technology for the preparation of high-quality multicomponent semiconductor materials and validate the proposed path by demonstrating functional electronic devices on silicon.The aim of the project is also to significantly expand my knowledge base and therefore amplify the impact of my research as well as my career prospects. TECNO ideally demonstrates the mutual overlap of typically quite separate fields, i.e. chemistry with solid state physics and device engineering. My deep expertise in electrochemistry perfectly matches the requirements of IBMs semiconductor interests and their integration technology. It is truly beneficial for both parties involved. IBM will benefit from my electrochemical solution expertise, while I will learn how to push my work to another level of maturity and impact in an industrial environment.
Status
TERMINATEDCall topic
MSCA-IF-2019Update Date
28-04-2024
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