Summary
Electronic devices evolved significantly, fuelling the digital transformation towards a connected society. To growing need for performance, speed and efficiency pushes wireless applications to operate at sub-THz frequencies and beyond. Today’s technologies, however, come short to efficiently and effectively utilize these frequencies, even taking into account technological evolutions. A disruptive yet commercially viable technology is urgently needed. Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance. Today, InP is only adopted in niche markets because of its costly and scarce substrates. Move2THz will transform the InP platform and build a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing.
To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education.
Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.
To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education.
Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/101139842 |
| Start date: | 01-06-2024 |
| End date: | 31-05-2027 |
| Total budget - Public funding: | 38 820 454,45 Euro - 11 963 652,00 Euro |
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Original description
Electronic devices evolved significantly, fuelling the digital transformation towards a connected society. To growing need for performance, speed and efficiency pushes wireless applications to operate at sub-THz frequencies and beyond. Today’s technologies, however, come short to efficiently and effectively utilize these frequencies, even taking into account technological evolutions. A disruptive yet commercially viable technology is urgently needed. Indium Phosphide (InP) has outstanding and unique capabilities to surpass other technologies in terms of high-frequency performance. Today, InP is only adopted in niche markets because of its costly and scarce substrates. Move2THz will transform the InP platform and build a fully integrated European value chain providing commercially attractive, ecology-friendly, mass-market technologies suitable for sub-THz frequency operation and beyond, enabling emerging applications like mobile/data connectivity, imaging and sensing.To achieve this, Move2THz will radically innovate the manufacturing process by establishing a breakthrough InP-on-silicon (InPoSi) global standard. This facilitates to upscale the wafer size & volume compatible with CMOS manufacturing capacities, while minimizing the use of rare InP resources and ecological footprint. Further up the value chain, the European InP platform will be developed, matured and adopted through substrates, manufacturing, design and foundry services, including integration, packaging and education.
Through Move2THz, the technical excellence provided by our consortium and the technologies developed in this project will significantly strengthen the competitive and sovereign position of Europe. It will secure its supply of semiconductors in a sustainable way for the next generations of wireless applications, generate a wealth of new market opportunities, and make significant contributions to a highly qualified European workforce. To achieve this, InP’s adoptability must accelerate NOW.
Status
SIGNEDCall topic
HORIZON-KDT-JU-2023-2-RIA-Topic-1Update Date
24-12-2024
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Organisations
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| SOITEC SA (SOITEC) (Coördinator)
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| ADMOS GMBH ADVANCED MODELING SOLUTIONS
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| AIXTRON SE
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| ALBIS OPTOELECTRONICS AG (ALBIS)
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| ALMAE TECHNOLOGIES (Almae)
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| CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
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| COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (CEA)
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| Chalmers University of Technology
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| DIRAMICS AG
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| EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH
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| Eindhoven University of Technology
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| FERDINAND-BRAUN-INSTITUT GGMBH LEIBNIZ- INSTITUT FUR HOCHSTFREQUENZTECNIK
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| FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
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| FREIBERGER COMPOUND MATERIALS GMBH (FCM)
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| III-V LAB