Summary
The world is foreseeing future electronics in demand of miniaturization, quantum efficiency, and low power consumption with the emergence of novel two-dimensional (2D) semiconductor materials. 2D materials' ultra-thin size, band gap engineering, and structural designing demonstrates high-performance optoelectronic devices but lacks novel materials or manipulation mechanisms to achieve low dark current, high absorption/emission efficiency, and low cost of production. Ferroelectric materials can modulate the mobility, carrier concentration, and band alignment in these 2D materials resulting in non-volatile control of photonic and optoelectronic properties. α-In2Se3, a ferroelectric semiconducting material by virtue of its peculiar crystal structure inheriting both in-plane (IP) and out-of-plane polarization (OOP) at room temperature is a game changer that manipulates the band bending and carrier transport can be non-destructive and controllable in the ferroelectric–optoelectronic hybrid systems. The 2D semiconductor ferroelectric switchable optoelectronics (2DSFSO) propose the integration of CVD-synthesized larg-area α-In2Se3 and MoS2/doped MoS2 heterostructure devices with multifunctional properties. The peculiar OOP of α-In2Se3 can switch the band alignment in the hydrid system from type II to type I exhibiting enhanced photodetection and luminescence within the same device features a switchable optoelectronic system. The cornerstones of the proposal are (a) integrating large area 2D ferroelectric and semiconductor thinfilms by epitaxial growth (b) adoption of various spectroscopic and microscopic techniques to analyze the interface physics to understand the band switching mechanism resulting in multipurpose optoelectronic devices. The large-area 2D ferroelectric platform can act as a universal platform to modulate the 2D semiconductor hybrids that can facilitate functional devices that are indispensable component for the next-generation Internet of Things system.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/101180612 |
| Start date: | 01-09-2025 |
| End date: | 31-08-2027 |
| Total budget - Public funding: | - 161 889,00 Euro |
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Original description
The world is foreseeing future electronics in demand of miniaturization, quantum efficiency, and low power consumption with the emergence of novel two-dimensional (2D) semiconductor materials. 2D materials' ultra-thin size, band gap engineering, and structural designing demonstrates high-performance optoelectronic devices but lacks novel materials or manipulation mechanisms to achieve low dark current, high absorption/emission efficiency, and low cost of production. Ferroelectric materials can modulate the mobility, carrier concentration, and band alignment in these 2D materials resulting in non-volatile control of photonic and optoelectronic properties. α-In2Se3, a ferroelectric semiconducting material by virtue of its peculiar crystal structure inheriting both in-plane (IP) and out-of-plane polarization (OOP) at room temperature is a game changer that manipulates the band bending and carrier transport can be non-destructive and controllable in the ferroelectric–optoelectronic hybrid systems. The 2D semiconductor ferroelectric switchable optoelectronics (2DSFSO) propose the integration of CVD-synthesized larg-area α-In2Se3 and MoS2/doped MoS2 heterostructure devices with multifunctional properties. The peculiar OOP of α-In2Se3 can switch the band alignment in the hydrid system from type II to type I exhibiting enhanced photodetection and luminescence within the same device features a switchable optoelectronic system. The cornerstones of the proposal are (a) integrating large area 2D ferroelectric and semiconductor thinfilms by epitaxial growth (b) adoption of various spectroscopic and microscopic techniques to analyze the interface physics to understand the band switching mechanism resulting in multipurpose optoelectronic devices. The large-area 2D ferroelectric platform can act as a universal platform to modulate the 2D semiconductor hybrids that can facilitate functional devices that are indispensable component for the next-generation Internet of Things system.Status
SIGNEDCall topic
HORIZON-WIDERA-2023-TALENTS-02-01Update Date
22-11-2024
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