Summary
This project aims to imply the co-integrated externally applied Mechanical Stress (MS) up to GPa levels by nanoindentation with electrical characterization setup and on-chip heating capability to study the properties of Non-silicon Devices (ND), specifically two-dimensional Transition metal dichalcogenides (2D TMD) and indium gallium zinc oxide (IGZO) based devices to explore the multitudinous electrical, physical, and reliability characteristics and creating accurately-calibrated models to predict the Stress Effects on Technology (SET). The project encompasses three objectives, which are further subdivided into five work packages (WPs) for easy flow and achievement of the goal. The first objective is to Integrate non-silicon FETs with an on-chip heating to Co-integrated electro-mechanical setup. The first objective paves the way to lead us to our second objective, in which the Dual Assessment with Electro-mechanical and Reliability Characterization of 2D TMD and IGZO FETs with MS and heating is performed. Finally, to corroborate the understanding and the physics of devices, accurate modelling and simulation will be performed in the third objective using the finite element method (FEM) and technology computer-aided design (TCAD), which will be calibrated with experimental data as obtained in the second objective. This project will be valuable for gaining insights into the factors that influence the behaviour of non-silicon-based FETs, including an additional factor like mechanical stress in addition to heating.
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| Web resources: | https://cordis.europa.eu/project/id/101154357 |
| Start date: | 01-08-2024 |
| End date: | 31-07-2026 |
| Total budget - Public funding: | - 175 920,00 Euro |
Cordis data
Original description
This project aims to imply the co-integrated externally applied Mechanical Stress (MS) up to GPa levels by nanoindentation with electrical characterization setup and on-chip heating capability to study the properties of Non-silicon Devices (ND), specifically two-dimensional Transition metal dichalcogenides (2D TMD) and indium gallium zinc oxide (IGZO) based devices to explore the multitudinous electrical, physical, and reliability characteristics and creating accurately-calibrated models to predict the Stress Effects on Technology (SET). The project encompasses three objectives, which are further subdivided into five work packages (WPs) for easy flow and achievement of the goal. The first objective is to Integrate non-silicon FETs with an on-chip heating to Co-integrated electro-mechanical setup. The first objective paves the way to lead us to our second objective, in which the Dual Assessment with Electro-mechanical and Reliability Characterization of 2D TMD and IGZO FETs with MS and heating is performed. Finally, to corroborate the understanding and the physics of devices, accurate modelling and simulation will be performed in the third objective using the finite element method (FEM) and technology computer-aided design (TCAD), which will be calibrated with experimental data as obtained in the second objective. This project will be valuable for gaining insights into the factors that influence the behaviour of non-silicon-based FETs, including an additional factor like mechanical stress in addition to heating.Status
SIGNEDCall topic
HORIZON-MSCA-2023-PF-01-01Update Date
22-11-2024
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