Summary
Tailoring electronic properties of quantum matter is of immense current interest in the condensed matter physics community. The ability to control quantum states benefits both fundamental understanding of the underlying physics and the advancement of next-generation quantum techniques. Recently, ionic gating has emerged as a powerful tool in manipulating electronic states by achieving ultra-high doping levels. However, this technique has not been applied to scanning tunneling microscopy (STM) studies, which are crucial in accessing the local density of electronic states and exploring correlated phases.
I will establish a new STM technique that integrates ionic gating (SIG-STM) to manipulate quantum states through ultra-high carrier density doping. SIG-STM will open a completely new window to study highly doped correlated materials at the atomic level. 1. I will fabricate the nano-devices that can reach ultra-high doping levels through ionic gating and are compatible with low-temperature STM. 2. I will carry out STM studies on the devices to demonstrate the technique of SIG-STM. 3. I will combine SIG-STM and molecular beam epitaxy to study versatile and low-dimension materials.
This project combines the strengths of both the experienced researcher and the host group. Our new SIG-STM technique combines our expertise in the fabrication of high-quality devices (from myself) and STM measurements (from the host group). SIG-STM will be a breakthrough in condensed matter physics that can contribute to long-lasting problems such as the origin of high-temperature superconductivity. In addition, SIG-STM has great potential to expand understanding of new functional materials such as dissipationless materials and advanced electronics in quantum technologies with strong societal and potentially economic impact.
I will establish a new STM technique that integrates ionic gating (SIG-STM) to manipulate quantum states through ultra-high carrier density doping. SIG-STM will open a completely new window to study highly doped correlated materials at the atomic level. 1. I will fabricate the nano-devices that can reach ultra-high doping levels through ionic gating and are compatible with low-temperature STM. 2. I will carry out STM studies on the devices to demonstrate the technique of SIG-STM. 3. I will combine SIG-STM and molecular beam epitaxy to study versatile and low-dimension materials.
This project combines the strengths of both the experienced researcher and the host group. Our new SIG-STM technique combines our expertise in the fabrication of high-quality devices (from myself) and STM measurements (from the host group). SIG-STM will be a breakthrough in condensed matter physics that can contribute to long-lasting problems such as the origin of high-temperature superconductivity. In addition, SIG-STM has great potential to expand understanding of new functional materials such as dissipationless materials and advanced electronics in quantum technologies with strong societal and potentially economic impact.
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| Web resources: | https://cordis.europa.eu/project/id/101154353 |
| Start date: | 01-01-2025 |
| End date: | 31-12-2026 |
| Total budget - Public funding: | - 199 694,00 Euro |
Cordis data
Original description
Tailoring electronic properties of quantum matter is of immense current interest in the condensed matter physics community. The ability to control quantum states benefits both fundamental understanding of the underlying physics and the advancement of next-generation quantum techniques. Recently, ionic gating has emerged as a powerful tool in manipulating electronic states by achieving ultra-high doping levels. However, this technique has not been applied to scanning tunneling microscopy (STM) studies, which are crucial in accessing the local density of electronic states and exploring correlated phases.I will establish a new STM technique that integrates ionic gating (SIG-STM) to manipulate quantum states through ultra-high carrier density doping. SIG-STM will open a completely new window to study highly doped correlated materials at the atomic level. 1. I will fabricate the nano-devices that can reach ultra-high doping levels through ionic gating and are compatible with low-temperature STM. 2. I will carry out STM studies on the devices to demonstrate the technique of SIG-STM. 3. I will combine SIG-STM and molecular beam epitaxy to study versatile and low-dimension materials.
This project combines the strengths of both the experienced researcher and the host group. Our new SIG-STM technique combines our expertise in the fabrication of high-quality devices (from myself) and STM measurements (from the host group). SIG-STM will be a breakthrough in condensed matter physics that can contribute to long-lasting problems such as the origin of high-temperature superconductivity. In addition, SIG-STM has great potential to expand understanding of new functional materials such as dissipationless materials and advanced electronics in quantum technologies with strong societal and potentially economic impact.
Status
SIGNEDCall topic
HORIZON-MSCA-2023-PF-01-01Update Date
26-11-2024
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