Summary
Digital communications are a cornerstone of a digitalised and connected society. Both terrestrial and satellite communications systems face increasing demands for higher frequency band, power and efficiency for communications electronics.
SweGaN has developed a patent-protected production tool and methodology for producing very high quality GaN material grown on a Silicon Carbide substrate. Implemented as High Electron Mobility Transistors (HEMTs), our devices have of the world’s best performances, particularly at high frequencies. The recent breakthrough CoolHEMT design is the world’s first bufferless GaN HEMT, with superior power and frequency performance. SweGaN materials will enable smaller devices, weighing less, consuming less power, and reducing systems requirements; devices with better cost/benefit ratios. These can a) reduce energy per bit of data: combatting the growing energy/CO2 footprint of digital communications, and b) are more cost-effective: enabling widespread, affordable, sustainable internet for all, a cornerstone of Digital Society and Digital Single Market. CoolHEMT will also complement ongoing European efforts to secure an autonomous source of high quality GaN materials and devices for advanced applications
Building on a successful phase 1 activity (ELeGaNS), the CoolHEMT phase 2 project will 1) further improve the performance of its baseline GaN material and devices, 2) scale material production and process into a pilot line, 3) validate material performance in prototype devices developed with commercial partners, including field trials in representative extreme environments, and 4) secure the pre-orders, joint ventures and investment to finance final scaling to market (in Phase 3).
SweGaN aim to reach a market share of 10% of GaN devices in Europe, generating 157 direct and 600 indirect jobs and €26.5M in direct revenue by 2023.
SweGaN has developed a patent-protected production tool and methodology for producing very high quality GaN material grown on a Silicon Carbide substrate. Implemented as High Electron Mobility Transistors (HEMTs), our devices have of the world’s best performances, particularly at high frequencies. The recent breakthrough CoolHEMT design is the world’s first bufferless GaN HEMT, with superior power and frequency performance. SweGaN materials will enable smaller devices, weighing less, consuming less power, and reducing systems requirements; devices with better cost/benefit ratios. These can a) reduce energy per bit of data: combatting the growing energy/CO2 footprint of digital communications, and b) are more cost-effective: enabling widespread, affordable, sustainable internet for all, a cornerstone of Digital Society and Digital Single Market. CoolHEMT will also complement ongoing European efforts to secure an autonomous source of high quality GaN materials and devices for advanced applications
Building on a successful phase 1 activity (ELeGaNS), the CoolHEMT phase 2 project will 1) further improve the performance of its baseline GaN material and devices, 2) scale material production and process into a pilot line, 3) validate material performance in prototype devices developed with commercial partners, including field trials in representative extreme environments, and 4) secure the pre-orders, joint ventures and investment to finance final scaling to market (in Phase 3).
SweGaN aim to reach a market share of 10% of GaN devices in Europe, generating 157 direct and 600 indirect jobs and €26.5M in direct revenue by 2023.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/823260 |
| Start date: | 01-09-2018 |
| End date: | 28-02-2021 |
| Total budget - Public funding: | 2 354 562,50 Euro - 1 648 193,00 Euro |
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Original description
Digital communications are a cornerstone of a digitalised and connected society. Both terrestrial and satellite communications systems face increasing demands for higher frequency band, power and efficiency for communications electronics.SweGaN has developed a patent-protected production tool and methodology for producing very high quality GaN material grown on a Silicon Carbide substrate. Implemented as High Electron Mobility Transistors (HEMTs), our devices have of the world’s best performances, particularly at high frequencies. The recent breakthrough CoolHEMT design is the world’s first bufferless GaN HEMT, with superior power and frequency performance. SweGaN materials will enable smaller devices, weighing less, consuming less power, and reducing systems requirements; devices with better cost/benefit ratios. These can a) reduce energy per bit of data: combatting the growing energy/CO2 footprint of digital communications, and b) are more cost-effective: enabling widespread, affordable, sustainable internet for all, a cornerstone of Digital Society and Digital Single Market. CoolHEMT will also complement ongoing European efforts to secure an autonomous source of high quality GaN materials and devices for advanced applications
Building on a successful phase 1 activity (ELeGaNS), the CoolHEMT phase 2 project will 1) further improve the performance of its baseline GaN material and devices, 2) scale material production and process into a pilot line, 3) validate material performance in prototype devices developed with commercial partners, including field trials in representative extreme environments, and 4) secure the pre-orders, joint ventures and investment to finance final scaling to market (in Phase 3).
SweGaN aim to reach a market share of 10% of GaN devices in Europe, generating 157 direct and 600 indirect jobs and €26.5M in direct revenue by 2023.
Status
CLOSEDCall topic
EIC-SMEInst-2018-2020Update Date
26-10-2022
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