SEQUENCE | Cryogenic 3D Nanoelectronics

Summary
SEQUENCE will make use of unconventional approaches to develop cryogenic electronics with demonstration in applications spanning from quantum computing to satellite communication systems.

Approach: SEQUENCE has aggregated a strong consortium consisting of 9 partners with well-documented experience in III-V and Si technology, including IC design skills. 3D integration of interfacing electronics with quantum computing technologies such as Si spin qubit layers, will be developed to reduce form factors, latency, and power consumption, enabling qubit multiplexing strategies to significantly reduce physical components count inside and outside the cryostat. We will develop RF functions such as LNAs, mixers, oscillators, DACs, multiplexers and RF switches, initiating a new generation of low-power cryogenic electronics, combining III-V and Si CMOS technologies, for scalable quantum computers. The development will be based on cryogenic transistor and circuits validated models, reducing IC design margins operated at extremely low power levels. Novel nanoelectronic devices will be developed, explored, and benchmarked providing performance added values, at cryogenic temperatures.

Impact with our main outcomes: A) Cryogenic 3D integration technology and strategies with optimal balance between III-V, Si CMOS, and emerging device technologies – power/form factor constraints trade-off, B) new set of critical cryogenic building blocks, C) A matured set of emerging nanoelectronics, up to TRL 4, with technology benchmark that bring added value and will support future transistor technology nodes, D) An exploitation strategy of the technology developed targeting Quantum applications, space communication and sensing, and future wideband room temperature communication.

The SEQUENCE project, will develop and strengthen synergies between the identified fields.
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More information & hyperlinks
Web resources: https://cordis.europa.eu/project/id/871764
Start date: 01-01-2020
End date: 31-07-2023
Total budget - Public funding: 4 466 278,00 Euro - 4 466 277,00 Euro
Cordis data

Original description

SEQUENCE will make use of unconventional approaches to develop cryogenic electronics with demonstration in applications spanning from quantum computing to satellite communication systems.

Approach: SEQUENCE has aggregated a strong consortium consisting of 9 partners with well-documented experience in III-V and Si technology, including IC design skills. 3D integration of interfacing electronics with quantum computing technologies such as Si spin qubit layers, will be developed to reduce form factors, latency, and power consumption, enabling qubit multiplexing strategies to significantly reduce physical components count inside and outside the cryostat. We will develop RF functions such as LNAs, mixers, oscillators, DACs, multiplexers and RF switches, initiating a new generation of low-power cryogenic electronics, combining III-V and Si CMOS technologies, for scalable quantum computers. The development will be based on cryogenic transistor and circuits validated models, reducing IC design margins operated at extremely low power levels. Novel nanoelectronic devices will be developed, explored, and benchmarked providing performance added values, at cryogenic temperatures.

Impact with our main outcomes: A) Cryogenic 3D integration technology and strategies with optimal balance between III-V, Si CMOS, and emerging device technologies – power/form factor constraints trade-off, B) new set of critical cryogenic building blocks, C) A matured set of emerging nanoelectronics, up to TRL 4, with technology benchmark that bring added value and will support future transistor technology nodes, D) An exploitation strategy of the technology developed targeting Quantum applications, space communication and sensing, and future wideband room temperature communication.

The SEQUENCE project, will develop and strengthen synergies between the identified fields.

Status

SIGNED

Call topic

ICT-06-2019

Update Date

27-10-2022
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Horizon 2020
H2020-EU.2. INDUSTRIAL LEADERSHIP
H2020-EU.2.1. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies
H2020-EU.2.1.1. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)
H2020-EU.2.1.1.0. INDUSTRIAL LEADERSHIP - ICT - Cross-cutting calls
H2020-ICT-2019-2
ICT-06-2019 Unconventional Nanoelectronics