Summary
SEQUENCE will make use of unconventional approaches to develop cryogenic electronics with demonstration in applications spanning from quantum computing to satellite communication systems.
Approach: SEQUENCE has aggregated a strong consortium consisting of 9 partners with well-documented experience in III-V and Si technology, including IC design skills. 3D integration of interfacing electronics with quantum computing technologies such as Si spin qubit layers, will be developed to reduce form factors, latency, and power consumption, enabling qubit multiplexing strategies to significantly reduce physical components count inside and outside the cryostat. We will develop RF functions such as LNAs, mixers, oscillators, DACs, multiplexers and RF switches, initiating a new generation of low-power cryogenic electronics, combining III-V and Si CMOS technologies, for scalable quantum computers. The development will be based on cryogenic transistor and circuits validated models, reducing IC design margins operated at extremely low power levels. Novel nanoelectronic devices will be developed, explored, and benchmarked providing performance added values, at cryogenic temperatures.
Impact with our main outcomes: A) Cryogenic 3D integration technology and strategies with optimal balance between III-V, Si CMOS, and emerging device technologies – power/form factor constraints trade-off, B) new set of critical cryogenic building blocks, C) A matured set of emerging nanoelectronics, up to TRL 4, with technology benchmark that bring added value and will support future transistor technology nodes, D) An exploitation strategy of the technology developed targeting Quantum applications, space communication and sensing, and future wideband room temperature communication.
The SEQUENCE project, will develop and strengthen synergies between the identified fields.
Approach: SEQUENCE has aggregated a strong consortium consisting of 9 partners with well-documented experience in III-V and Si technology, including IC design skills. 3D integration of interfacing electronics with quantum computing technologies such as Si spin qubit layers, will be developed to reduce form factors, latency, and power consumption, enabling qubit multiplexing strategies to significantly reduce physical components count inside and outside the cryostat. We will develop RF functions such as LNAs, mixers, oscillators, DACs, multiplexers and RF switches, initiating a new generation of low-power cryogenic electronics, combining III-V and Si CMOS technologies, for scalable quantum computers. The development will be based on cryogenic transistor and circuits validated models, reducing IC design margins operated at extremely low power levels. Novel nanoelectronic devices will be developed, explored, and benchmarked providing performance added values, at cryogenic temperatures.
Impact with our main outcomes: A) Cryogenic 3D integration technology and strategies with optimal balance between III-V, Si CMOS, and emerging device technologies – power/form factor constraints trade-off, B) new set of critical cryogenic building blocks, C) A matured set of emerging nanoelectronics, up to TRL 4, with technology benchmark that bring added value and will support future transistor technology nodes, D) An exploitation strategy of the technology developed targeting Quantum applications, space communication and sensing, and future wideband room temperature communication.
The SEQUENCE project, will develop and strengthen synergies between the identified fields.
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More information & hyperlinks
| Web resources: | https://cordis.europa.eu/project/id/871764 |
| Start date: | 01-01-2020 |
| End date: | 31-07-2023 |
| Total budget - Public funding: | 4 466 278,00 Euro - 4 466 277,00 Euro |
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Original description
SEQUENCE will make use of unconventional approaches to develop cryogenic electronics with demonstration in applications spanning from quantum computing to satellite communication systems.Approach: SEQUENCE has aggregated a strong consortium consisting of 9 partners with well-documented experience in III-V and Si technology, including IC design skills. 3D integration of interfacing electronics with quantum computing technologies such as Si spin qubit layers, will be developed to reduce form factors, latency, and power consumption, enabling qubit multiplexing strategies to significantly reduce physical components count inside and outside the cryostat. We will develop RF functions such as LNAs, mixers, oscillators, DACs, multiplexers and RF switches, initiating a new generation of low-power cryogenic electronics, combining III-V and Si CMOS technologies, for scalable quantum computers. The development will be based on cryogenic transistor and circuits validated models, reducing IC design margins operated at extremely low power levels. Novel nanoelectronic devices will be developed, explored, and benchmarked providing performance added values, at cryogenic temperatures.
Impact with our main outcomes: A) Cryogenic 3D integration technology and strategies with optimal balance between III-V, Si CMOS, and emerging device technologies – power/form factor constraints trade-off, B) new set of critical cryogenic building blocks, C) A matured set of emerging nanoelectronics, up to TRL 4, with technology benchmark that bring added value and will support future transistor technology nodes, D) An exploitation strategy of the technology developed targeting Quantum applications, space communication and sensing, and future wideband room temperature communication.
The SEQUENCE project, will develop and strengthen synergies between the identified fields.
Status
SIGNEDCall topic
ICT-06-2019Update Date
27-10-2022
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