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InRel-NPower | Innovative Reliable Nitride based Power Devices and Applications

01-01-2017

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30-11-2020

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EU-Programme-Call
Horizon 2020
H2020-EU.2. INDUSTRIAL LEADERSHIP
H2020-EU.2.1. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies
H2020-EU.2.1.3. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials
H2020-EU.2.1.3.0. Cross-cutting call topics
H2020-NMBP-2016-two-stage
NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology

CHALLENGE | 3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

01-01-2017

-

30-06-2021

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EU-Programme-Call
Horizon 2020
H2020-EU.2. INDUSTRIAL LEADERSHIP
H2020-EU.2.1. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies
H2020-EU.2.1.3. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials
H2020-EU.2.1.3.0. Cross-cutting call topics
H2020-NMBP-2016-two-stage
NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology

GaNonCMOS | GaN densily integrated with Si-CMOS for reliable, cost effective high frequency power delivery systems

01-01-2017

-

30-06-2021

Show more information
EU-Programme-Call
Horizon 2020
H2020-EU.2. INDUSTRIAL LEADERSHIP
H2020-EU.2.1. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies
H2020-EU.2.1.3. INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials
H2020-EU.2.1.3.0. Cross-cutting call topics
H2020-NMBP-2016-two-stage
NMBP-02-2016 Advanced Materials for Power Electronics based on wide bandgap semiconductor devices technology
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