Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors

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Authors: O. Loto, M. Florentin, C. Masante, N. Donato, M.-L. Hicks, A. C. Pakpour-Tabrizi, R. B. Jackman, V. Zuerbig, P. Godignon, D. Eon, J. Pernot, F. Udrea, E. Gheeraert

Journal title: IEEE Transactions on Electron Devices

Journal number: 65/8

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2018

Published pages: 3361-3364

DOI identifier: 10.1109/ted.2018.2847340

ISSN: 0018-9383