Thick homoepitaxial (110)-oriented phosphorus-doped n -type diamond

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Authors: Y. Balasubramaniam, P. Pobedinskas, S. D. Janssens, G. Sakr, F. Jomard, S. Turner, Y.-G. Lu, W. Dexters, A. Soltani, J. Verbeeck, J. Barjon, M. Nesládek, K. Haenen

Journal title: Applied Physics Letters

Journal number: 109/6

Journal publisher: American Institute of Physics

Published year: 2016

Published pages: 062105

DOI identifier: 10.1063/1.4960970

ISSN: 0003-6951