High quality Al 2 O 3 /(100) oxygen-terminated diamond interface for MOSFETs fabrication

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Authors: T. T. Pham, M. Gutiérrez, C. Masante, N. Rouger, D. Eon, E. Gheeraert, D. Araùjo, J. Pernot

Journal title: Applied Physics Letters

Journal number: 112/10

Journal publisher: American Institute of Physics

Published year: 2018

Published pages: 102103

DOI identifier: 10.1063/1.5018403

ISSN: 0003-6951