Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

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Authors: Andrea Ingenito, Gizem Nogay, Josua Stuckelberger, Philippe Wyss, Luca Gnocchi, Christophe Allebe, Jorg Horzel, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif

Journal title: IEEE Journal of Photovoltaics

Journal number: 9/2

Journal publisher: IEEE Electron Devices Society

Published year: 2019

Published pages: 346-354

DOI identifier: 10.1109/jphotov.2018.2886234

ISSN: 2156-3381