Conductive Filament Stabilization in Oxygen Engineered Hafnium and Yttrium Oxide‐based RRAM Devices Revealed by Low‐frequency Noise Studies

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Authors: E. Piros, M. Lonsky, S. Petzold, A. Zintler, N. Kaiser, T. Vogel, R. Eilhardt, S. U. Sharath, E. Jalaguier, E. Nolot, C. Charpin-Nicolle, C. Wenger, L. Molina-Luna, J. Müller and L. Alff

Journal title: 4th International Conference on Memristive Materials, Devices & Systems (Memrisys) 2021

Journal publisher: Memrisys

Published year: 2021