0.4-µm InP/InGaAs DHBT with a 380-GHz fT, > 600-GHz fmax and BVCE0 > 4.5V

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Authors: N. Davy, V. Nodjiadjim, M. Riet, C. MIsmer, M. Deng, C. Mukherjee, J. Renaudier, C. Maneux

Journal title: 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Journal publisher: IEEE

Published year: 2021

DOI identifier: 10.1109/bcicts50416.2021.9682209