Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based Germanium Ferroelectric p-FETs for Nonvolatile Memory Applications

Summary

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Christina Zacharaki; Stefanos Chaitoglou; Nikitas Siannas; Polychronis Tsipas; Athanasios Dimoulas

Journal title: ACS Applied Electronic Materials

Journal publisher: American Chemical Society

Published year: 2022

DOI identifier: 10.1021/acsaelm.2c00324

ISSN: 2637-6113