Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

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Authors: R. Fontanini; M. Segatto; K. S. Nair; M. Holzer; F. Driussi; I. Hausler; C. T. Koch; C. Dubourdieu; V. Deshpande; D. Esseni

Journal title: IEEE Transactions on Electron Devices

Journal number: 8

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2022

DOI identifier: 10.1109/ted.2022.3175684

ISSN: 0018-9383