Performance of Vertical Gate-all-around Nanowire p-MOS Transistors Determined by Boron Depletion During Oxidation

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Authors: C. Rossi, A. Burenkov, P. Pichler, E. Bär, J. Müller, G. Larrieu

Journal title: Solid-State Electron.

Journal number: 200

Journal publisher: Pergamon Press Ltd.

Published year: 2023

Published pages: 108551

DOI identifier: 10.1016/j.sse.2022.108551

ISSN: 0038-1101