Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

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Authors: N. Chery, M. Zhang, R. Monflier, N. Mallet, G. Seine, V. Paillard, J. M. Poumirol, G. Larrieu, A. S. Royet, S. Kerdilès, P. Acosta-Alba, M. Perego, C. Bonafos, F. Cristiano

Journal title: J. Appl. Phys.

Journal number: 131

Journal publisher: American Institute of Physics

Published year: 2022

Published pages: 065301

DOI identifier: 10.1063/5.0073827

ISSN: 0021-8979