Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks

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Authors: A. Baroni, A. Glukhov, E. Perez, C. Wenger, D. Ielmini, P. Olivo and C. Zambelli

Journal title: IEEE Transactions on Device and Materials Reliability, vol. 22, no. 3, pp. 340-347, Sept. 2022

Journal publisher: Institute of Electrical and Electronics Engineers

Published year: 2022

DOI identifier: 10.1109/tdmr.2022.3182133

ISSN: 1530-4388