Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

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Authors: M. Fregolent, A. Marcuzzi, C. De Santi, E. Bahat Treidel, G. Meneghesso, E. Zanoni, and M. Meneghini

Journal title: International Reliability Physics Symposium 2023

Journal number: Yearly

Journal publisher: IEEE

Published year: 2023

DOI identifier: 10.1109/irps48203.2023.10117719

ISBN: 978-1-6654-5672-2