Modeling and experimental validation of wafer curvature during growth of thick GaN layers on large Si(111) substrates for vertical power devices

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Authors: Sondre Michler (SIL)

Journal title: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany

Journal publisher: IWN

Published year: 2022

DOI identifier: 10.1088/1361-6641/aca42a