Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

This is a publication. If there is no link to the publication on this page, you can try the pre-formated search via the search engines listed on this page.

Authors: Sven Besendörfer (FhG)

Journal title: IWN International Workshop on Nitride Semiconductors, October 09-14, 2022, Berlin/Germany

Journal publisher: IWN

Published year: 2022