Impact of gate dielectric deposition temperature on p-type inversion channel MOSFETs fabricated on GaN-on-Si

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Authors: M. Henn, C. Huber (Bosch)

Journal title: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)

Journal publisher: IEEE

Published year: 2022

DOI identifier: 10.1109/wipdaeurope55971.2022.9936574