Process challenges and perspectives of vertical GaN power transistors on foreign substrates

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Authors: C. Huber, S. Regensburger, J. Baringhaus (Bosch), E. Bahat-Treidel (FBH), F. Medjdoub (CNRS)

Journal title: Proceedings of the International Workshop on Nitride Semiconductors 2022

Journal publisher: HAL

Published year: 2022