Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

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Authors: Liad Tadmor, Enrico Brusaterra, Eldad Bahat Treidel, Frank Brunner, Nicole Bickel, Sofie S T Vandenbroucke, Christophe Detavernier, Joachim Würfl and Oliver Hilt

Journal title: Semiconductor Science and Technology

Journal number: Volume 38, Number 1

Journal publisher: Institute of Physics Publishing

Published year: 2022

Published pages: 015006

DOI identifier: 10.1088/1361-6641/aca42a

ISSN: 0268-1242