Analytical modelling of SiC MOSFET based on datasheet parameters considering the dynamic transfer characteristics and channel resistance dependency on the drain voltage

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Authors: Betha, H.V., Odavic, M. and Atallah, K.

Journal title: IEEE Applied Power Electronics Conference and Exposition (APEC)

Journal number: 19-23 Mar 2023

Journal publisher: Institute of Electrical and Electronics Engineers (IEEE)

Published year: 2023

DOI identifier: 10.1109/apec43580.2023.10131160

ISBN: 9781665475389