Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

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Authors: Agata Piacentini, Damiano Marian, Daniel S. Schneider, Enrique González Marín, Zhenyu Wang, Martin Otto, Bárbara Canto, Aleksandra Radenovic, Andras Kis, Gianluca Fiori, Max C. Lemme, and Daniel Neumaier

Journal title: Advanced Electronic Materials

Journal publisher: Wiley

Published year: 2022

DOI identifier: 10.1002/aelm.202200123

ISSN: 2199-160X