Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

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Authors: M. Dragoman, A. Dinescu, A. Avram, D. Dragoman, S. Vulpe, M. Aldrigo, T. Braniste, V. Suman, E. Rusu, and I. Tiginyanu

Journal title: Nanotechnology

Journal publisher: Institute of Physics Publishing

Published year: 2022

DOI identifier: 10.1088/1361-6528/ac7cf8

ISSN: 0957-4484