Short cavity InGaN-based laser diodes with cavity length below 300 μ m

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Authors: Hezhi Zhang, Ching-Wen Shih, Denis Martin, Alexander Caut, Jean-François Carlin, Raphaël Butté, Nicolas Grandjean

Journal title: Semiconductor Science and Technology

Journal number: 34/8

Journal publisher: Institute of Physics Publishing

Published year: 2019

Published pages: 085005

DOI identifier: 10.1088/1361-6641/ab2c2f

ISSN: 0268-1242