Strongly anisotropic spin relaxation in the neutral silicon vacancy center in diamond

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Authors: B. C. Rose, G. Thiering, A. M. Tyryshkin, A. M. Edmonds, M. L. Markham, A. Gali, S. A. Lyon, N. P. de Leon

Journal title: Physical Review B

Journal number: 98/23

Journal publisher: American Physical Society

Published year: 2018

Published pages: 235140-1 - 235140-12

DOI identifier: 10.1103/physrevb.98.235140

ISSN: 2469-9950