Al/EuS/Al and Co/Al203/Al/FI systems

Summary
Report, including the results of evaluation of the spin-filtering tunnel barrier EuS in Al/EuS/Al tunnel junctions, parameters of growth of the FI GdN, MnSe films and comparison of the figure of merit of magnetoelectric conversion in Co/Al2O3/Al/FI tunnel junctions for EuS, GdN and MnSe, results on the optimization of the lateral size of these tunnel junctions by means of the EBL