Single-step reactive ion etching process for device integration of hafnium-zirconium-oxide (HZO)/titanium nitride (TiN) stacks

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Authors: Tom Mauersberger; Jens Trommer; Saurabh Sharma; Martin Knaut; Darius Pohl; Bernd Rellinghaus; Thomas Mikolajick; Andre Heinzig

Journal title: Semiconductor Science and Technology

Journal number: 1

Journal publisher: Institute of Physics Publishing

Published year: 2021

DOI identifier: 10.1088/1361-6641/ac1827

ISSN: 0268-1242