Schottky barriers, emission regimes and contact resistances in 2H-1T’ MoS 2 lateral metal-semiconductor junctions from first-principles

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Authors: M Laura Urquiza, Xavier Cartoixà

Journal title: 2D Materials

Journal number: 7/4

Journal publisher: IOP Publishing

Published year: 2020

Published pages: 045030

DOI identifier: 10.1088/2053-1583/aba449

ISSN: 2053-1583