Exfoliated hexagonal BN as gate dielectric for InSb nanowire quantum dots with improved gate hysteresis and charge noise

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Authors: Felix Jekat, Benjamin Pestka, Diana Car, Saša Gazibegović, Kilian Flöhr, Sebastian Heedt, Jürgen Schubert, Marcus Liebmann, Erik P. A. M. Bakkers, Thomas Schäpers, Markus Morgenstern

Journal title: Applied Physics Letters

Journal number: 116/25

Journal publisher: American Institute of Physics

Published year: 2020

Published pages: 253101

DOI identifier: 10.1063/5.0002112

ISSN: 0003-6951