High yield and process uniformity for 300 mm integrated WS2 FETs

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Authors: T.Schram, Q.Smets, D.Radisic, B.Groven, A.Thiam, W.Li, E.Dupuy,K.Vandersmissen, T.Maurice, I.Asselberghs & I.Radu

Journal title: 2021 Symposium on VLSI Technology

Journal publisher: IEEE

Published year: 2021