Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB

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Authors: Quentin Smets; Tom Schram; Devin Verreck; Daire Cott; Benjamin Groven; Zubair Ahmed; Ben Kaczer; Jerome Mitard; Xiangyu Wu; Souvik Kundu; Hans Mertens; Dunja Radisic; Arame Thiam; Waikin Li; Emmanuel Dupuy; Zheng Tao; Kevin Vandersmissen; Thibaut Maurice; Dennis Lin; Pierre Morin; Inge Asselberghs; Iuliana Radu

Journal title: 2021 IEEE International Electron Devices Meeting

Journal publisher: IEEE

Published year: 2021

DOI identifier: 10.1109/iedm19574.2021.9720517