Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

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Authors: Agata Piacentini,Damiano Marian,Daniel S. Schneider,Enrique González Marín,Zhenyu Wang,Martin Otto,Bárbara Canto,Aleksandra Radenovic,Andras Kis,Gianluca Fiori,Max C. Lemme,Daniel Neumaier

Journal title: Advanced Electronic Materials

Journal number: 2199160X

Journal publisher: Wiley

Published year: 2022

DOI identifier: 10.1002/aelm.202200123

ISSN: 2199-160X