Energetic mapping of oxide traps in MoS 2 field-effect transistors

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Authors: Yury Yu Illarionov, Theresia Knobloch, Michael Waltl, Gerhard Rzepa, Andreas Pospischil, Dmitry K Polyushkin, Marco M Furchi, Thomas Mueller, Tibor Grasser

Journal title: 2D Materials

Journal number: 4/2

Journal publisher: IOP

Published year: 2017

Published pages: 025108

DOI identifier: 10.1088/2053-1583/aa734a

ISSN: 2053-1583