Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC

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Authors: M. Winters, E. Ö. Sveinbjörnsson, C. Melios, O. Kazakova, W. Strupiński, N. Rorsman

Journal title: AIP Advances

Journal number: 6/8

Journal publisher: American Institute of Physics Inc.

Published year: 2016

Published pages: 085010

DOI identifier: 10.1063/1.4961361

ISSN: 2158-3226