Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

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Authors: Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan, Suresh Sundaram, Youssef El Gmili, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden

Journal title: Applied Physics Letters

Journal number: 108/10

Journal publisher: American Institute of Physics

Published year: 2016

Published pages: 103105

DOI identifier: 10.1063/1.4943205

ISSN: 0003-6951