Phonon-Assisted Resonant Tunneling of Electrons in Graphene–Boron Nitride Transistors

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Authors: E. E. Vdovin, A. Mishchenko, M. T. Greenaway, M. J. Zhu, D. Ghazaryan, A. Misra, Y. Cao, S. V. Morozov, O. Makarovsky, T. M. Fromhold, A. Patanè, G. J. Slotman, M. I. Katsnelson, A. K. Geim, K. S. Novoselov, L. Eaves

Journal title: Physical Review Letters

Journal number: 116/18

Journal publisher: American Physical Society

Published year: 2016

DOI identifier: 10.1103/PhysRevLett.116.186603

ISSN: 0031-9007