Hysteresis modeling in graphene field effect transistors

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Authors: M. Winters, E. Ö. Sveinbjörnsson, N. Rorsman

Journal title: Journal of Applied Physics

Journal number: 117/7

Journal publisher: American Institute of Physics

Published year: 2015

Published pages: 074501

DOI identifier: 10.1063/1.4913209

ISSN: 0021-8979