Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds

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Authors: Patrizio Graziosi, Neophytos Neophytou

Journal title: Journal of Applied Physics

Journal number: 123/8

Journal publisher: American Institute of Physics

Published year: 2018

Published pages: 084503

DOI identifier: 10.1063/1.5011328

ISSN: 0021-8979