Step-flow growth in homoepitaxy of β -Ga 2 O 3 (100)—The influence of the miscut direction and faceting

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Authors: R. Schewski, K. Lion, A. Fiedler, C. Wouters, A. Popp, S. V. Levchenko, T. Schulz, M. Schmidbauer, S. Bin Anooz, R. Grüneberg, Z. Galazka, G. Wagner, K. Irmscher, M. Scheffler, C. Draxl, M. Albrecht

Journal title: APL Materials

Journal number: 7/2

Journal publisher: American Institute of Physics

Published year: 2019

Published pages: 022515

DOI identifier: 10.1063/1.5054943

ISSN: 2166-532X