Ferroelectric-Antiferroelectric Transition of Hf<sub>1–<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf<sub>0.2</sub>Zr<sub>0.8</sub>O<sub>2</sub>

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Authors: Lars-Erik Wernersson; Anton Persson; Hannes Dahlberg; Robin Athle

Journal title: Applied Electronic Materials

Journal number: 1

Journal publisher: ACS

Published year: 2022

DOI identifier: 10.1021/acsaelm.2c01483

ISSN: 2637-6113